| PART |
Description |
Maker |
| SFT2014/3 SFT2012/3 |
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MJ15001 MJ15002 ON1979 NH15002 |
15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
|
MOTOROLA INC
Motorola Inc
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MJ15003.MOD |
20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
SEMELAB LTD
|
| SFT1014 |
100 amp HIGH ENERGY NPN TRANSISTORS 100 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid State Devices, Inc.
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
|
Motorola, Inc.
ON Semi
|
| 2N6339 2N6340 |
High-Power NPN Silicon Transistor(25A200W20V（集电极-发射极），硅NPN大功率晶体管) 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Power NPN Silicon Transistor(25A00W40V（集电极-发射极），硅NPN大功率晶体管) 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| CSD362 CSD362N CSD362O CSD362R |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE.
NPN PLASTIC POWER TRANSISTOR
|
Continental Device India Limited
Powerex Power Semiconductors
|
| APT4014BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology Ltd.
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT8014L2FLL |
POWER MOS 7 800V 52A 0.140 Ohm
|
Advanced Power Technology
|
|
